| PART |
Description |
Maker |
| M45PE80 M45PE80-VMF6G M45PE80-VMF6P M45PE80-VMF6TG |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| M25PE10 M25PE10-VMN6G M25PE10-VMN6P M25PE10-VMN6TG |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
|
Numonyx B.V
|
| M45PE80 M45PE80-VMN6G M45PE80-VMN6P M45PE80-VMN6TG |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M459E16VMP6G M459E16VMP6P M459E16VMP6TG M459E16VMP |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
STMicroelectronics
|
| M45PE40-VMW6G M45PE40-VMW6P M45PE40-VMW6TG M45PE40 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M45PE80-VMP6P |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
| M25PE40 M25PE40VMN6G M25PE40VMN6P M25PE40VMN6TG M2 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M45PE10 |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus I
From old datasheet system
|
STMicroelectronics
|
| M25PE40 |
Page-Erasable Serial Flash memory
|
ST Microelectronics
|
| SST25VF020-20-4C-SAE-T SST25VF020-20-4I-SA SST25VF |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, PDSO8
2 Mbit / 4 Mbit SPI Serial Flash
|
Silicon Storage Technol...
Microchip Technology Inc.
Silicon Storage Technology, Inc.
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
